Using gallium nitride on 8-in silicon wafers, Bridgelux is achieving LED efficacy in the lab on par with LEDs produced on sapphire or silicon-carbide wafers.
Bridgelux announced that it has fabricated LEDs in the lab using gallium-nitride-on-silicon (GaN-on-Si) technology that delivers 160 lm/W (cool white) and 125 lm/W (warm white) efficacy.
The performance realized using 8-in wafers is similar to the best efficacy demonstrated in the lab by leading LED vendors using traditional sapphire or silicon carbide wafers, and Bridgelux believes the GaN-on-Si approach will ultimately yield a "75% improvement in cost" for LED components that will in turn reduce the cost of solid-state-lighting (SSL) lamps and luminaires.
The new LEDs deliver a cool-white CCT of 4350K and a warm white CCT of 2940K. The warm white devices have a CRI of 80.